Addressing of Optoelectronic Memory of Thin Film Zinc Porphyrin with Crossed 5 mm Indium Tin Oxide Arrays

We report here the preparation and characterization of an optoelectronic memory device based on a single layer of organic thin film ~;0.9 mm thick! of zinc octakis~b-decoxyethyl!porphyrin, sandwiched between two crossed indium tin oxide ~ITO! arrays. The ITO lines in the array were 5 mm wide and were separated from each other by a 5 mm gap. Data ~in the form of an electric charge! could be independently stored at and retrieved from an intersection of the crossed ITO lines with irradiation. Each intersection defined one memory pixel (5 3 5 mm) and there was no cross talk with nearby pixels under the test conditions, clearly demonstrating its potential application as an information storage device using a molecular thin film. © 2001 The Electrochemical Society. @DOI: 10.1149/1.1397975# All rights reserved.